Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
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IEEE
Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE)
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The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
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1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2. New York: IEEE, p. 267-270, 1999.
