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A Dielectric Model of Self-Assembled Monolayer Interfaces by Capacitive Spectroscopy

dc.contributor.authorGoes, Marcio S. [UNESP]
dc.contributor.authorRahman, Habibur
dc.contributor.authorRyall, Joshua
dc.contributor.authorDavis, Jason J.
dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.institutionUniv Oxford
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:31:42Z
dc.date.available2014-05-20T15:31:42Z
dc.date.issued2012-06-26
dc.description.abstractThe presence of self-assembled monolayers at an electrode introduces capacitance and resistance contributions that can profoundly affect subsequently observed electronic characteristics. Despite the impact of this on any voltammetry, these contributions are not directly resolvable with any clarity by standard electrochemical means. A capacitive analysis of such interfaces (by capacitance spectroscopy), introduced here, enables a clean mapping of these features and additionally presents a means of studying layer polarizability and Cole-Cole relaxation effects. The resolved resistive term contributes directly to an intrinsic monolayer uncompensated resistance that has a linear dependence on the layer thickness. The dielectric model proposed is fully aligned with the classic Helmholtz plate capacitor model and additionally explains the inherently associated resistive features of molecular films.en
dc.description.affiliationUniv Oxford, Dept Chem, Oxford OX1 3TA, England
dc.description.affiliationSão Paulo State Univ, Univ Estadual Paulista, UNESP, Inst Quim,Inst Chem,Dept Phys Chem, BR-14800900 São Paulo, Brazil
dc.description.affiliationUnespSão Paulo State Univ, Univ Estadual Paulista, UNESP, Inst Quim,Inst Chem,Dept Phys Chem, BR-14800900 São Paulo, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipSão Paulo State University (UNESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent9689-9699
dc.identifierhttp://dx.doi.org/10.1021/la301281y
dc.identifier.citationLangmuir. Washington: Amer Chemical Soc, v. 28, n. 25, p. 9689-9699, 2012.
dc.identifier.doi10.1021/la301281y
dc.identifier.issn0743-7463
dc.identifier.lattes0477045906733254
dc.identifier.orcid0000-0003-2827-0208
dc.identifier.urihttp://hdl.handle.net/11449/40770
dc.identifier.wosWOS:000305661400061
dc.language.isoeng
dc.publisherAmer Chemical Soc
dc.relation.ispartofLangmuir
dc.relation.ispartofjcr3.789
dc.relation.ispartofsjr1,479
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleA Dielectric Model of Self-Assembled Monolayer Interfaces by Capacitive Spectroscopyen
dc.typeArtigo
dcterms.licensehttp://pubs.acs.org/page/copyright/index.html
dcterms.rightsHolderAmer Chemical Soc
dspace.entity.typePublication
unesp.author.lattes0477045906733254[5]
unesp.author.orcid0000-0003-2827-0208[5]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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