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Fatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRies, A.
dc.contributor.authorFilho, F. M.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:27:14Z
dc.date.available2014-05-20T15:27:14Z
dc.date.issued2004-12-13
dc.description.abstractFatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 degreesC for 10 min. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 muC/cm(2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 10(10) read/write switching cycles. (C) 2004 American Institute of Physics.en
dc.description.affiliationPaulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13560905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespPaulista State Univ, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent5962-5964
dc.identifierhttp://dx.doi.org/10.1063/1.1834999
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 85, n. 24, p. 5962-5964, 2004.
dc.identifier.doi10.1063/1.1834999
dc.identifier.fileWOS000225620200049.pdf
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11449/37253
dc.identifier.wosWOS:000225620200049
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleFatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
dspace.entity.typePublication
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[4]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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