Er-doped silica-based waveguides prepared by different techniques: RF-sputtering, sol-gel and ion-exchange
Carregando...
Fontes externas
Fontes externas
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Kluwer Academic Publ
Springer Nature
Springer Nature
Tipo
Artigo
Direito de acesso
Acesso restrito
Fontes externas
Fontes externas
Resumo
Erbium-activated silica-based planar waveguides were prepared by three different technological routes: RF-sputtering, sol-gel and ion exchange. Various parameters of preparation were varied in order to optimize the waveguides for operation in the NIR region. Particular attention was devoted to the minimization of the losses and the increase of the luminescence efficiency of the metastable I-4(13/2) state of the Er3+ ion. Waveguide properties were determined by m-line spectroscopy and loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical processes related to the luminescence of the Er3+ ions.
Descrição
Palavras-chave
Idioma
Inglês
Citação
Optical and Quantum Electronics. Dordrecht: Kluwer Academic Publ, v. 34, n. 12, p. 1151-1166, 2002.
