Disclosing the resistive switching and polar properties of Nd-doped Bi4Ti3O12 thin films

Abstract

This study presents a straightforward chemical solution deposition route for producing Nd-doped bismuth titanate thin films via chemical solution deposition. Bi4−xNdxTi3O12 (x = 0.0-BITP, x = 0.25-BIT25Nd, and x = 0.75-BIT75Nd) were investigated. Nd incorporation suppresses bismuth oxide secondary phases, refines grain uniformity, and enhances ferroelectric response, leading to improved remnant polarization (21.8μC/cm²) and lower drive voltages. A distinct resistive switching mechanism with ILRS/IHRS ratios exceeding 10² positions these materials as frontrunners for next-generation ReRAM and optoelectronic applications. The observed red shift in photoluminescence signals increased oxygen vacancies and deep-level defects, offering exciting opportunities for tailored electronic properties. These enhancements position Nd-doped BIT as a promising material for resistive random-access memory (ReRAM) and light-emitting applications, offering a multifunctional platform for advanced electronic and optoelectronic systems. Its potential use in low-power mobile devices is particularly compelling, enabling faster access times and reduced power consumption relative to conventional flash memory. In particular, the low switching voltages observed in BIT75Nd support energy-efficient operation, which is critical for battery-powered devices such as smartphones and wearables.