Low-voltage varistor based on (Sn,Ti)O-2 ceramics
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Amer Ceramic Soc
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A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.
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Journal of the American Ceramic Society. Westerville: Amer Ceramic Soc, v. 85, n. 1, p. 282-284, 2002.
