Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition
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Abstract
We present measurements of resistivity ρ in highly oriented LaNiO3 films grown on LaAlO3 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal ρ(T) ∝ T3/2 dependence for the entire temperature interval (20 K T 300 K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy hωsf ≃ 2.1 meV) triggered by spin-density wave propagating through the interface boundary of LaNiO3/LaAlO3 sandwich.
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JETP Letters, v. 102, n. 6, p. 383-386, 2015.
