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Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

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dc.contributor.authorTararam, R. [UNESP]
dc.contributor.authorJoanni, E.
dc.contributor.authorSavu, R.
dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCtr Tecnol Informação Renato Archer CTI
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-20T14:18:31Z
dc.date.available2014-05-20T14:18:31Z
dc.date.issued2011-02-01
dc.description.abstractHighly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies have shown that the nanostructures have a polycrystalline nature and are oriented perpendicular to the substrate. The high density of grain boundaries in the nanorods is responsible for the nonlinear current behavior observed in these arrays. The current-voltage (I-V) characteristics observed in nanorods were attributed to the resistive memory phenomenon. The electrical resistance of microcapacitors composed of CaCu3Ti4O12 nanorods could be reversibly switched between two stable resistance states by varying the applied electric field. In order to explain this switching mechanism, a model based on the increase/decrease of electrical conduction controlled by grain boundary polarization has been proposed.en
dc.description.affiliationUniv Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil
dc.description.affiliationCtr Tecnol Informação Renato Archer CTI, BR-13069901 São Paulo, Brazil
dc.description.affiliationUniv Estadual Campinas, CCS, BR-13083970 Campinas, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipIdFAPESP: 06/61758-4
dc.format.extent500-504
dc.identifierhttp://dx.doi.org/10.1021/am101079g
dc.identifier.citationAcs Applied Materials & Interfaces. Washington: Amer Chemical Soc, v. 3, n. 2, p. 500-504, 2011.
dc.identifier.doi10.1021/am101079g
dc.identifier.issn1944-8244
dc.identifier.lattes0477045906733254
dc.identifier.orcid0000-0003-2827-0208
dc.identifier.urihttp://hdl.handle.net/11449/25581
dc.identifier.wosWOS:000287639400054
dc.language.isoeng
dc.publisherAmer Chemical Soc
dc.relation.ispartofAcs Applied Materials & Interfaces
dc.relation.ispartofjcr8.097
dc.relation.ispartofsjr2,784
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectCCTOen
dc.subjectnanorodsen
dc.subjectdielectricen
dc.subjectnonlinear I-Ven
dc.subjectresistive switchingen
dc.subjectRF sputteringen
dc.titleResistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorodsen
dc.typeArtigo
dcterms.licensehttp://pubs.acs.org/page/copyright/journals/faqs.html
dcterms.rightsHolderAmer Chemical Soc
dspace.entity.typePublication
unesp.author.lattes0477045906733254[4]
unesp.author.orcid0000-0003-2827-0208[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química