As4S4 role on the photoinduced birefringence of silver-doped chalcogenide thin films
Carregando...
Fontes externas
Fontes externas
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Artigo
Direito de acesso
Acesso aberto
Fontes externas
Fontes externas
Resumo
AgX(As40S60)100-X thin films (x = 7, 15, 25, 50) were deposited on glass slides by a co-evaporation technique under a vacuum. Photoinduced birefringence was induced using light provided from a continuous argon-ion laser operating at 488 nm. We investigated the impact of silver concentration and laser power density. The thin films structural changes after irradiation were characterized by Raman spectroscopy, indicating that addition of Ag induces the breaking of sulfur ring units and favors the creation of Ag-S-Ag bridging bonds. During this process, AgS3 pyramids and As4S4 molecules are formed, the latter being responsible for an increased photoinduced birefringence.
Descrição
Palavras-chave
Idioma
Inglês
Citação
Optical Materials Express, v. 6, n. 5, p. 1451-1463, 2016.
