Sensitive Devices Based on Field-Effect Transistors
| dc.contributor.author | Faria, Henrique Antonio Mendonça [UNESP] | |
| dc.contributor.author | Fernandes, Edson Giuliani Ramos | |
| dc.contributor.author | Vieira, Nirton Cristi Silva | |
| dc.contributor.editor | Frank N. Crespilho | |
| dc.contributor.institution | Universidade de São Paulo (USP) | |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | |
| dc.date.accessioned | 2023-07-29T13:13:29Z | |
| dc.date.available | 2023-07-29T13:13:29Z | |
| dc.date.issued | 2022-01-01 | |
| dc.description.abstract | Among the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3]. | en |
| dc.description.affiliation | Institute of Science and Technology Federal University of São Paulo, SP | |
| dc.description.affiliation | Institute of Chemistry São Paulo State University (Unesp), SP | |
| dc.description.affiliationUnesp | Institute of Chemistry São Paulo State University (Unesp), SP | |
| dc.format.extent | 71-87 | |
| dc.identifier | http://dx.doi.org/10.1007/978-3-030-94988-4_5 | |
| dc.identifier.citation | Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87. | |
| dc.identifier.dimensions | pub.1146967557 | |
| dc.identifier.doi | 10.1007/978-3-030-94988-4_5 | |
| dc.identifier.isbn | 978-3-030-94987-7 | |
| dc.identifier.isbn | 978-3-030-94988-4 | |
| dc.identifier.orcid | 0000-0001-6976-6897 | |
| dc.identifier.orcid | 0000-0003-2095-674X | |
| dc.identifier.scopus | 2-s2.0-85159001345 | |
| dc.identifier.uri | http://hdl.handle.net/11449/247343 | |
| dc.language.iso | eng | |
| dc.publisher | Springer Nature | |
| dc.relation.ispartof | Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques | |
| dc.rights.accessRights | Acesso aberto | pt |
| dc.rights.sourceRights | oa_all | |
| dc.rights.sourceRights | green | |
| dc.source | Scopus | |
| dc.source | Dimensions | |
| dc.title | Sensitive Devices Based on Field-Effect Transistors | en |
| dc.type | Capítulo de livro | pt |
| dspace.entity.type | Publication | |
| relation.isOrgUnitOfPublication | bc74a1ce-4c4c-4dad-8378-83962d76c4fd | |
| relation.isOrgUnitOfPublication.latestForDiscovery | bc74a1ce-4c4c-4dad-8378-83962d76c4fd | |
| unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara | pt |

