Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
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In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.
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2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.
