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Photo-induced effects in Ge25Ga10S65 glasses studied by XPS and XAS

dc.contributor.authorLisboa Filho, Paulo Noronha [UNESP]
dc.contributor.authorMastelaro, V. R.
dc.contributor.authorSchreiner, W. H.
dc.contributor.authorMessaddeq, S. H.
dc.contributor.authorLi, M. S.
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.authorHammer, Peter [UNESP]
dc.contributor.authorRibeiro, SJL
dc.contributor.authorParent, P.
dc.contributor.authorLaffon, C.
dc.contributor.institutionUniversidade Federal do Paraná (UFPR)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCtr Univ Paris Sud
dc.date.accessioned2014-05-20T15:27:15Z
dc.date.available2014-05-20T15:27:15Z
dc.date.issued2005-05-12
dc.description.abstractThe present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniversidade Federal do Paraná (UFPF), Dept Fis, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil
dc.description.affiliationUniv São Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, Brazil
dc.description.affiliationCtr Univ Paris Sud, Lab Utilisast Rayonnement Electromagnet, F-91898 Orsay, France
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, Brazil
dc.format.extent1403-1409
dc.identifierhttp://dx.doi.org/10.1016/j.ssi.2005.04.005
dc.identifier.citationSolid State Ionics. Amsterdam: Elsevier B.V., v. 176, n. 15-16, p. 1403-1409, 2005.
dc.identifier.doi10.1016/j.ssi.2005.04.005
dc.identifier.issn0167-2738
dc.identifier.lattes2998503841917815
dc.identifier.lattes6466841023506131
dc.identifier.lattes6446047463034654
dc.identifier.lattes1353862414532005
dc.identifier.orcid0000-0002-7734-4069
dc.identifier.orcid0000-0002-3823-0050
dc.identifier.urihttp://hdl.handle.net/11449/37275
dc.identifier.wosWOS:000230094700009
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofSolid State Ionics
dc.relation.ispartofjcr2.751
dc.relation.ispartofsjr0,856
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectchalcogenide glassespt
dc.subjectphoto-induced effectspt
dc.subjectoxygenpt
dc.subjectXPSpt
dc.subjectXASpt
dc.titlePhoto-induced effects in Ge25Ga10S65 glasses studied by XPS and XASen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes2998503841917815
unesp.author.lattes6466841023506131(7)
unesp.author.lattes6446047463034654
unesp.author.lattes1353862414532005[1]
unesp.author.orcid0000-0002-7734-4069[1]
unesp.author.orcid0000-0002-3823-0050(7)
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentQuímica Inorgânica - IQARpt

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