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dc.contributor.authorGupta, H. M. [UNESP]
dc.contributor.authorMorais, Marta B. [UNESP]
dc.date.accessioned2014-05-27T10:13:17Z
dc.date.available2014-05-27T10:13:17Z
dc.date.issued1990-12-01
dc.identifierhttp://dx.doi.org/10.1063/1.347111
dc.identifier.citationJournal of Applied Physics, v. 68, n. 1, p. 176-182, 1990.
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11449/64034
dc.description.abstractThe metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.en
dc.format.extent176-182
dc.language.isoeng
dc.relation.ispartofJournal of Applied Physics
dc.sourceScopus
dc.titleTheory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structuresen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.description.affiliationDepartamento de Física IGCE UNESP, C. P. 178, 13500 Rio Claro SP
dc.description.affiliationDepartamento de Ciências Faculdade de Engenharia UNESP, 15378 Ilha Solteira SP
dc.description.affiliationUnespDepartamento de Física IGCE UNESP, C. P. 178, 13500 Rio Claro SP
dc.description.affiliationUnespDepartamento de Ciências Faculdade de Engenharia UNESP, 15378 Ilha Solteira SP
dc.identifier.doi10.1063/1.347111
dc.rights.accessRightsAcesso restrito
dc.identifier.scopus2-s2.0-0348035786
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Geociências e Ciências Exatas, Rio Claropt
dc.identifier.file2-s2.0-0348035786.pdf
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
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