Influence of the network modifier on the characteristics of MSnO 3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

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2013-03-01

Autores

Alves, M. C F
Marinho, R. M M
Casali, G. P.
Siu-Li, M.
Députier, S.
Guilloux-Viry, M.
Souza, A. G.
Longo, Elson [UNESP]
Weber, I. T.
Santos, I. M G

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Resumo

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO 3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process. © 2012 Elsevier Inc. All rights reserved.

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Chemical solution deposition, Epitaxial growth, Perovskite, Photoluminescence, Polymeric precursor method, Stannates, Alkaline earth, C-sapphire, Crystallization process, Crystallization temperature, Field emission scanning electron microscopy, Growth process, High-crystalline quality, Micro Raman Spectroscopy, Network modifiers, Polycrystalline growth, Polymeric precursor methods, Single crystal substrates, SrTiO, Substrate orientation, Atomic force microscopy, Calcium, Epitaxial films, Field emission microscopes, Raman spectroscopy, Sapphire, Strontium titanates, X ray diffraction, Polymers

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Journal of Solid State Chemistry, v. 199, p. 34-41.