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dc.contributor.authorde Dios Mitma Pillaca, Elver Juan [UNESP]
dc.contributor.authorUeda, Mario
dc.contributor.authorKostov, Konstantin Georgiev [UNESP]
dc.date.accessioned2014-05-20T13:27:49Z
dc.date.available2014-05-20T13:27:49Z
dc.date.issued2011-11-01
dc.identifierhttp://dx.doi.org/10.1109/TPS.2011.2160209
dc.identifier.citationIEEE Transactions on Plasma Science. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc, v. 39, n. 11, p. 3049-3055, 2011.
dc.identifier.issn0093-3813
dc.identifier.urihttp://hdl.handle.net/11449/9221
dc.description.abstractPlasma immersion ion implantation (PIII) with low external magnetic field has been investigated both numerically and experimentally. The static magnetic field considered is essentially nonuniform and is generated by two magnetic coils installed outside the vacuum chamber. Experiments have been conducted to investigate the effect of two of the most important PIII parameters: target voltage and gas pressure. In that context, it was found that the current density increased when the external parameters were varied. Later, the PIII process was analyzed numerically using the 2.5-D computer code KARAT. The numerical results show that the system of crossed E x B fields enhances the PIII process. The simulation showed an increase of the plasma density around the target under the operating and design conditions considered. Consequently, an increase of the ion current density on the target was observed. All these results are explained through the mechanism of gas ionization by collisions with electrons drifting in crossed E x B fields.en
dc.format.extent3049-3055
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIEEE Transactions on Plasma Science
dc.sourceWeb of Science
dc.subjectIon implantationen
dc.subjectmagnetic confinementen
dc.subjectmagnetic mirroren
dc.subjectplasma immersion ion implantation (PIII)en
dc.titleInvestigation of Plasma Immersion Ion Implantation Process in Magnetic Mirror Geometryen
dc.typeArtigo
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIEEE-Inst Electrical Electronics Engineers Inc
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionInstituto Nacional de Pesquisas Espaciais (INPE)
dc.description.affiliationState Univ São Paulo UNESP, Fac Engn, BR-12516410 Guaratingueta, Brazil
dc.description.affiliationNatl Inst Space Res INPE, Associated Lab Plasma, BR-12227010 Sao Jose Dos Campos, Brazil
dc.description.affiliationUnespState Univ São Paulo UNESP, Fac Engn, BR-12516410 Guaratingueta, Brazil
dc.identifier.doi10.1109/TPS.2011.2160209
dc.identifier.wosWOS:000298078500005
dc.rights.accessRightsAcesso restrito
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetápt
dc.identifier.lattes1946509801000450
unesp.author.lattes1946509801000450
dc.relation.ispartofjcr1.253
dc.relation.ispartofsjr0,522
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