Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

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dc.contributor.authorSimões, A. Z. [UNESP]
dc.contributor.authorRamírez, M. A. [UNESP]
dc.contributor.authorStojanović, B. D. [UNESP]
dc.contributor.authorMarinković, Z.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversity of Belgrade
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-27T11:22:04Z
dc.date.available2014-05-27T11:22:04Z
dc.date.issued2006-12-01
dc.description.abstractThe ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.en
dc.description.affiliationUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Belgrade, Ctr Multidisciplinary Studies, Belgrade 11001, Serbia Monteneg
dc.description.affiliationUFSCar, Dept Chem, Sao Carlos, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent212-215
dc.identifierhttp://dx.doi.org/10.4028/www.scientific.net/MSF.514-516.212
dc.identifier.citationMaterials Science Forum, v. 514-516, n. PART 1, p. 212-215, 2006.
dc.identifier.doi10.4028/www.scientific.net/MSF.514-516.212
dc.identifier.issn0255-5476
dc.identifier.scopus2-s2.0-37849032028
dc.identifier.urihttp://hdl.handle.net/11449/130516
dc.identifier.wosWOS:000238056400044
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd
dc.relation.ispartofMaterials Science Forum
dc.relation.ispartofsjr0,180
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectBismuth titanate
dc.subjectDielectric properties
dc.subjectFerroelectric properties
dc.subjectThin films
dc.subjectPolymeric precursors
dc.subjectAtomic force microscopy
dc.subjectBismuth compounds
dc.subjectLeakage currents
dc.subjectMicrostructure
dc.subjectSurface morphology
dc.subjectFerroelectric materials
dc.titleFerroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://www.ttp.net/Downloads.html
dcterms.rightsHolderTrans Tech Publications Ltd
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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