Nanoscale investigation of ferroelectric and piezoelectric properties in (Pb,Ca)TiO3 thin films grown on LaNiO3/LaAlO3(1 0 0) and Pt/Si(1 1 1) using piezoresponse force microscopy

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dc.contributor.authorCapeli, R. A. [UNESP]
dc.contributor.authorPontes, F. M. [UNESP]
dc.contributor.authorPontes, D. S.L.
dc.contributor.authorChiquito, A. J.
dc.contributor.authorBastos, W. B. [UNESP]
dc.contributor.authorPereira-da-Silva, Marcelo A.
dc.contributor.authorLongo, E. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUNICEP
dc.date.accessioned2018-12-11T17:31:46Z
dc.date.available2018-12-11T17:31:46Z
dc.date.issued2017-06-01
dc.description.abstractSingle phase polycrystalline and strong textured Pb0.76Ca0.24TiO3 (PCT24) thin films have been grown on platinum coated silicon and LaAlO3(1 0 0) (LAO) substrates using LaNiO3 (LNO) as a buffer layer by chemical solution deposition. X-ray diffraction measurements showed that the PCT24 thin films crystallize in a highly a-oriented single phase on LNO/LAO(1 0 0). The effects of the LNO buffer layer, nature of the substrate, and film orientation on the ferroelectric and piezoelectric properties were investigated in the nanoscale range using piezoresponse force microscopy (PFM). Local piezoelectric hysteresis loops for PCT24/LNO/LAO(1 0 0) oriented films and PCT24/Pt/Si polycrystalline films were measured on selected grains. From these piezoloops, PCT24/LNO/LAO(1 0 0) oriented films show a higher response (maximum relative d33 value) than PCT24/Pt/Si polycrystalline films. Furthermore, the comparison of simultaneously acquired surface morphology and piezoresponse images of the PCT24/Pt/Si films revealed the presence of inactive grain regions. In contrast, highly a-oriented films showed a higher presence of active grains. Our observations suggest that the improvement of ferro/piezoelectric properties is greatly associated with the use of LNO buffer layers and the growth of highly a-oriented films.en
dc.description.affiliationDepartment of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473
dc.description.affiliationLIEC – Department of Chemistry Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676
dc.description.affiliationNanO LaB – Department of Physics Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676
dc.description.affiliationInstitute of Physics of São Carlos USP
dc.description.affiliationUNICEP
dc.description.affiliationInstitute of Chemistry Universidade Estadual Paulista – Unesp
dc.description.affiliationUnespDepartment of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473
dc.description.affiliationUnespInstitute of Chemistry Universidade Estadual Paulista – Unesp
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 11/20536-7
dc.description.sponsorshipIdFAPESP: 12/14106-2
dc.description.sponsorshipIdFAPESP: 13/07296-2
dc.description.sponsorshipIdCNPq: 470147/2012-1
dc.format.extent64-68
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2017.03.029
dc.identifier.citationMaterials Letters, v. 196, p. 64-68.
dc.identifier.doi10.1016/j.matlet.2017.03.029
dc.identifier.file2-s2.0-85014914348.pdf
dc.identifier.issn1873-4979
dc.identifier.issn0167-577X
dc.identifier.scopus2-s2.0-85014914348
dc.identifier.urihttp://hdl.handle.net/11449/178707
dc.language.isoeng
dc.relation.ispartofMaterials Letters
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectBuffer layer
dc.subjectEpitaxial growth
dc.subjectPFM
dc.subjectThin films
dc.titleNanoscale investigation of ferroelectric and piezoelectric properties in (Pb,Ca)TiO3 thin films grown on LaNiO3/LaAlO3(1 0 0) and Pt/Si(1 1 1) using piezoresponse force microscopyen
dc.typeArtigo

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