Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites

Página do item simplificado
dc.contributor.authorFeres, Flavio H. [UNESP]
dc.contributor.authorSantos, Lucas Fugikawa [UNESP]
dc.contributor.authorGozzi, Giovani [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T17:37:37Z
dc.date.available2018-12-11T17:37:37Z
dc.date.issued2018-01-01
dc.description.abstractIn the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene):polystyrene sulfonate, PEDOT:PSS), an inorganic electroluminescent material (manganese doped zinc orthosilicate, Zn2SiO4:Mn) and an organosilicon material (3-glicidoxypropyltrimethoxysilane, GPTMS), manufactured at different weight ratios of the component materials. The devices were obtained by depositing the active layer by drop-casting onto ITO-coated (RF-sputtering) glass substrates and thermally evaporating gold top electrodes in high vacuum. The results show that 90 wt% Zn2SiO4:Mn is required to observe high electroluminescence from the fabricated devices and that the optimum performance (turn-on voltage of 33 V, luminous efficacy of 24 cd/A and maximum luminance of almost 2000 cd/m2) was achieve for a (9.5/0.5/90) (GPTMS/PEDOT:PSS/Zn2SiO4:Mn) weight ratio. The device turn-on voltage found to be as proportional to the thickness of the active layer, indicating that the electroluminescence occurs by a field-effect mechanism. The temperature variation in the 100-300 K range allowed us to develop a theoretical model for the device operation, where the charge carrier transport in the active layer is well described by the variable range hopping model, with luminous efficacy nearby independent of the temperature.en
dc.description.affiliationDepartamento de Física Universidade Estadual Paulista - UNESP, Avenida 24A, 1515
dc.description.affiliationDepartamento de Física Universidade Estadual Paulista - UNESP, Rua Cristovao Colombo 2265
dc.description.affiliationUnespDepartamento de Física Universidade Estadual Paulista - UNESP, Avenida 24A, 1515
dc.description.affiliationUnespDepartamento de Física Universidade Estadual Paulista - UNESP, Rua Cristovao Colombo 2265
dc.format.extent1883-1889
dc.identifierhttp://dx.doi.org/10.1557/adv.2018.179
dc.identifier.citationMRS Advances, v. 3, n. 33, p. 1883-1889, 2018.
dc.identifier.doi10.1557/adv.2018.179
dc.identifier.issn2059-8521
dc.identifier.lattes0101178832675166
dc.identifier.scopus2-s2.0-85049325654
dc.identifier.urihttp://hdl.handle.net/11449/179999
dc.language.isoeng
dc.relation.ispartofMRS Advances
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectcomposite
dc.subjectdevices
dc.subjectluminescence
dc.titleTemperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Compositesen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0101178832675166[2]
unesp.author.orcid0000-0001-7376-2717[2]

Arquivos

Coleções

Artigos - Física - IBILCE