Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films

Página do item simplificado
dc.contributor.authorMendes, A. C.
dc.contributor.authorMaia, L. J. Q. [UNESP]
dc.contributor.authorMessaddeq, S. H.
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.authorZanatta, A. R.
dc.contributor.authorSiu Li, M.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Federal de Goiás (UFG)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:22Z
dc.date.available2014-05-20T15:30:22Z
dc.date.issued2010-11-01
dc.description.abstractPhotoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv São Paulo, Inst Fis São Carlos, BR-13566590 São Carlos, SP, Brazil
dc.description.affiliationUniversidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil
dc.description.affiliationUNESP Araraquara, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP Araraquara, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent1411-1415
dc.identifierhttp://dx.doi.org/10.1016/j.cap.2010.05.005
dc.identifier.citationCurrent Applied Physics. Amsterdam: Elsevier B.V., v. 10, n. 6, p. 1411-1415, 2010.
dc.identifier.doi10.1016/j.cap.2010.05.005
dc.identifier.issn1567-1739
dc.identifier.lattes2998503841917815
dc.identifier.urihttp://hdl.handle.net/11449/39769
dc.identifier.wosWOS:000280865900009
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofCurrent Applied Physics
dc.relation.ispartofjcr2.058
dc.relation.ispartofsjr0,647
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectPhotoexpansionen
dc.subjectPhotobleachingen
dc.subjectMicro-Raman spectroscopyen
dc.subjectPhotostructural changesen
dc.subjectThin filmsen
dc.titleRaman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes2998503841917815
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

Arquivos

Licença do Pacote
Agora exibindo 1 - 2 de 2
Nenhuma Miniatura disponível
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição:
Nenhuma Miniatura disponível
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição:

Coleções

Artigos - Química Inorgânica - IQ