Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films
dc.contributor.author | Mendes, A. C. | |
dc.contributor.author | Maia, L. J. Q. [UNESP] | |
dc.contributor.author | Messaddeq, S. H. | |
dc.contributor.author | Messaddeq, Younes [UNESP] | |
dc.contributor.author | Zanatta, A. R. | |
dc.contributor.author | Siu Li, M. | |
dc.contributor.institution | Universidade de São Paulo (USP) | |
dc.contributor.institution | Universidade Federal de Goiás (UFG) | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:30:22Z | |
dc.date.available | 2014-05-20T15:30:22Z | |
dc.date.issued | 2010-11-01 | |
dc.description.abstract | Photoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved. | en |
dc.description.affiliation | Univ São Paulo, Inst Fis São Carlos, BR-13566590 São Carlos, SP, Brazil | |
dc.description.affiliation | Universidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil | |
dc.description.affiliation | UNESP Araraquara, Inst Quim, BR-14801970 Araraquara, SP, Brazil | |
dc.description.affiliationUnesp | UNESP Araraquara, Inst Quim, BR-14801970 Araraquara, SP, Brazil | |
dc.format.extent | 1411-1415 | |
dc.identifier | http://dx.doi.org/10.1016/j.cap.2010.05.005 | |
dc.identifier.citation | Current Applied Physics. Amsterdam: Elsevier B.V., v. 10, n. 6, p. 1411-1415, 2010. | |
dc.identifier.doi | 10.1016/j.cap.2010.05.005 | |
dc.identifier.issn | 1567-1739 | |
dc.identifier.lattes | 2998503841917815 | |
dc.identifier.uri | http://hdl.handle.net/11449/39769 | |
dc.identifier.wos | WOS:000280865900009 | |
dc.language.iso | eng | |
dc.publisher | Elsevier B.V. | |
dc.relation.ispartof | Current Applied Physics | |
dc.relation.ispartofjcr | 2.058 | |
dc.relation.ispartofsjr | 0,647 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | Photoexpansion | en |
dc.subject | Photobleaching | en |
dc.subject | Micro-Raman spectroscopy | en |
dc.subject | Photostructural changes | en |
dc.subject | Thin films | en |
dc.title | Raman spectroscopy analysis of structural photoinduced changes in GeS2 + Ga2O3 thin films | en |
dc.type | Artigo | |
dcterms.license | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
dcterms.rightsHolder | Elsevier B.V. | |
unesp.author.lattes | 2998503841917815 | |
unesp.campus | Universidade Estadual Paulista (Unesp), Instituto de Química, Araraquara | pt |
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