CMOS-based active pixel for low-light-level detection: Analysis and measurements

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dc.contributor.authorFaramarzpour, Naser
dc.contributor.authorDeen, M. Jamal
dc.contributor.authorShirani, Shahram
dc.contributor.authorFang, Qiyin
dc.contributor.authorLiu, Louis W.C.
dc.contributor.authorCampos, Fernando de Souza
dc.contributor.authorSwart, Jacobus W.
dc.contributor.institutionMcMaster University
dc.contributor.institutionUniversity of Toronto
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCentro de Pesquisa Renato Archer
dc.date.accessioned2014-05-27T11:22:40Z
dc.date.available2014-05-27T11:22:40Z
dc.date.issued2007-12-01
dc.description.abstractAn analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is proposed. An analytic expression for the output voltage of the APS obtained with this capacitance model is in good agreement with measurements and is more accurate than the models used previously. A different mode of operation for the APS based on the dc level of the output is suggested. This new mode has better low-light-level sensitivity than the conventional APS operating mode, and it has a slower temporal response to the change of the incident light power. At 1μW/cm2 and lower levels of light, the measured signal-to-noise ratio (SNR) of this new mode is more than 10 dB higher than the SNR of previously reported APS circuits. Also, with an output SNR of about 10 dB, the proposed dc level is capable of detecting light powers as low as 20 nW/cm2, which is about 30 times lower than the light power detected in recent reports by other groups. © 2007 IEEE.en
dc.description.affiliationDepartment of Electrical and Computer Engineering McMaster University, Hamilton, ON L8S 4L8
dc.description.affiliationDepartment of Engineering Physics McMaster University, Hamilton, ON L8S 4L8
dc.description.affiliationDepartment of Medicine University of Toronto, Toronto, ON M5S 3G4
dc.description.affiliationUniversity of the State of S̃ao Paulo, Bauru, SP 17033-360
dc.description.affiliationCenPRA-Tecnologia de Informação Centro de Pesquisa Renato Archer, Rod. Dom Pedro I, Campinas, SP 13069-901
dc.format.extent3229-3237
dc.identifierhttp://dx.doi.org/10.1109/TED.2007.908594
dc.identifier.citationIEEE Transactions on Electron Devices, v. 54, n. 12, p. 3229-3237, 2007.
dc.identifier.doi10.1109/TED.2007.908594
dc.identifier.issn0018-9383
dc.identifier.lattes6668926182105107
dc.identifier.scopus2-s2.0-36849014292
dc.identifier.urihttp://hdl.handle.net/11449/70034
dc.language.isoeng
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.relation.ispartofjcr2.620
dc.relation.ispartofsjr0,839
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectActive pixel sensor (APS)
dc.subjectCapacitance-voltage (C-V ) profile
dc.subjectCMOS photodetector
dc.subjectHigh-sensitivity photodetector
dc.subjectLow-level light detection
dc.subjectSilicon photodetector
dc.subjectCapacitance
dc.subjectCMOS integrated circuits
dc.subjectPhotodetectors
dc.subjectPhotodiodes
dc.subjectSemiconductor device models
dc.subjectSensitivity analysis
dc.subjectCapacitance-votage (C-V) profile
dc.subjectPixels
dc.titleCMOS-based active pixel for low-light-level detection: Analysis and measurementsen
dc.typeArtigo
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
unesp.author.lattes6668926182105107
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Baurupt

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