A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
| dc.contributor.author | Nogueira, Gabriel L. | |
| dc.contributor.author | Vieira, Douglas H. | |
| dc.contributor.author | Morais, Rogerio M. | |
| dc.contributor.author | Serbena, Jose P. M. | |
| dc.contributor.author | Seidel, Keli F. | |
| dc.contributor.author | Alves, Neri | |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | |
| dc.contributor.institution | Universidade Federal do Paraná (UFPR) | |
| dc.date.accessioned | 2022-04-29T08:46:02Z | |
| dc.date.available | 2022-04-29T08:46:02Z | |
| dc.date.issued | 2021-01-01 | |
| dc.description.abstract | Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. | en |
| dc.description.affiliation | São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. (e-mail: leonardo.nogueira@unesp.br) | |
| dc.description.affiliation | São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. | |
| dc.description.affiliation | Universidade Federal do Paraná – UFPR, Physics Department, Curitiba, PR, Brazil. | |
| dc.description.affiliation | Universidade Tecnológica Federal Do Paraná – UTFPR, Physics Department, Curitiba, PR, Brazil. | |
| dc.identifier | http://dx.doi.org/10.1109/LED.2021.3120928 | |
| dc.identifier.citation | IEEE Electron Device Letters. | |
| dc.identifier.doi | 10.1109/LED.2021.3120928 | |
| dc.identifier.issn | 1558-0563 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.scopus | 2-s2.0-85117765402 | |
| dc.identifier.uri | http://hdl.handle.net/11449/231538 | |
| dc.language.iso | eng | |
| dc.relation.ispartof | IEEE Electron Device Letters | |
| dc.source | Scopus | |
| dc.subject | Field-effect transistor | |
| dc.subject | Schottky diode | |
| dc.subject | Spray-coating | |
| dc.subject | Vertical electrolyte-gated transistor | |
| dc.title | A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact | en |
| dc.type | Artigo |