Model for zinc oxide varistor

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dc.contributor.authorSantos, J. D.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorLeite, E. R.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:19:34Z
dc.date.available2014-05-27T11:19:34Z
dc.date.issued1998-05-01
dc.description.abstractZinc oxide varistors are very complex systems, and the dominant mechanism of voltage barrier formation in these systems has not been well established. Yet the MNDO quantum mechanical theoretical calculation was used in this work to determine the most probable defect type at the surface of a ZnO cluster. The proposed model represents well the semiconducting nature as well as the defects at the ZnO bulk and surface. The model also shows that the main adsorption species that provide stability at the ZnO surface are O-, O2 -, and O2.en
dc.description.affiliationDepartamento de Química Univ. Federal de São Carlos, C.P. 676, 13565-905, São Carlos, SP
dc.description.affiliationUniversidade Estadual Paulista Instituto de Química, C.P. 355, 14800-900, Araraquara, SP
dc.description.affiliationUnespUniversidade Estadual Paulista Instituto de Química, C.P. 355, 14800-900, Araraquara, SP
dc.format.extent1152-1157
dc.identifierhttp://dx.doi.org/10.1557/JMR.1998.0164
dc.identifier.citationJournal of Materials Research, v. 13, n. 5, p. 1152-1157, 1998.
dc.identifier.doi10.1557/JMR.1998.0164
dc.identifier.file2-s2.0-0000026039.pdf
dc.identifier.issn0884-2914
dc.identifier.scopus2-s2.0-0000026039
dc.identifier.urihttp://hdl.handle.net/11449/65439
dc.identifier.wosWOS:000073272500015
dc.language.isoeng
dc.relation.ispartofJournal of Materials Research
dc.relation.ispartofjcr1.495
dc.relation.ispartofsjr0,610
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.titleModel for zinc oxide varistoren
dc.typeArtigo
dcterms.licensehttp://journals.cambridge.org/action/displaySpecialPage?pageId=4676
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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Artigos - Físico Química - IQ