UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

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dc.contributor.authorVieira, Douglas Henrique [UNESP]
dc.contributor.authorda Silva Ozório, Maíza [UNESP]
dc.contributor.authorNogueira, Gabriel Leonardo [UNESP]
dc.contributor.authorFugikawa-Santos, Lucas [UNESP]
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2021-06-25T10:33:17Z
dc.date.available2021-06-25T10:33:17Z
dc.date.issued2021-01-01
dc.description.abstractThe UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. Electronic devices like thin-film transistors or Schottky diodes commonly present multiple parameters of electrical characteristic, which can be beneficially exploited to provide more information than sensors based on purely resistive or capacitive response. We manufactured Schottky diodes using spray-coated ZnO and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an easy, simple and low-cost method for producing multiparametric UV-photodetectors. The diode parameters presented rectification ratios (RR) as high as 104 and ideality factors as low as 1.3, and their characteristic curves were analyzed by Cheung's method to determine the effect of UV irradiation on the ideality factor, series resistance and Schottky barrier height. The study of the photocurrent response from spray-coated ZnO films as a function of geometric parameters and UV intensity demonstrated a transition from bimolecular to monomolecular recombination process at higher irradiance values, as a result of the adsorption/desorption dynamics of molecular oxygen at the semiconductor/air interface.en
dc.description.affiliationSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department
dc.description.affiliationSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department
dc.description.affiliationUnespSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department
dc.description.affiliationUnespSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipInstituto Nacional de Ciência e Tecnologia em Eletrônica Orgânica
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 2018/04169-3
dc.description.sponsorshipIdFAPESP: 2019/01671-2
dc.description.sponsorshipIdFAPESP: 2019/08019-9
dc.identifierhttp://dx.doi.org/10.1016/j.mssp.2020.105339
dc.identifier.citationMaterials Science in Semiconductor Processing, v. 121.
dc.identifier.doi10.1016/j.mssp.2020.105339
dc.identifier.issn1369-8001
dc.identifier.scopus2-s2.0-85089462521
dc.identifier.urihttp://hdl.handle.net/11449/206499
dc.language.isoeng
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.sourceScopus
dc.subjectHybrid devices
dc.subjectPEDOT:PSS
dc.subjectSchottky diode
dc.subjectSpray coating
dc.subjectUV-Photocurrent
dc.subjectZinc oxide
dc.titleUV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodesen
dc.typeArtigo

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