Sol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m application

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dc.contributor.authorGoncalves, R. R.
dc.contributor.authorCarturan, G.
dc.contributor.authorZampedri, L.
dc.contributor.authorFerrari, M.
dc.contributor.authorMontagna, M.
dc.contributor.authorChiasera, A.
dc.contributor.authorRighini, G. C.
dc.contributor.authorPelli, S.
dc.contributor.authorRibeiro, SJL
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.institutionUniv Trent
dc.contributor.institutionCNR
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:26:55Z
dc.date.available2014-05-20T15:26:55Z
dc.date.issued2002-07-01
dc.description.abstract70SiO(2)-30HfO(2) planar waveguides, doped with Er(3+) concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the (4)I(13/2)-->(4)I(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The (4)I(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.en
dc.description.affiliationUniv Trent, Dipartimento Ingn Mat, I-38050 Trento, Italy
dc.description.affiliationCNR, IFN, I-38050 Trento, Italy
dc.description.affiliationUniv Trent, Dipartimento Fis, I-38050 Trento, Italy
dc.description.affiliationUniv Trent, INFM, I-38050 Trento, Italy
dc.description.affiliationCNR, IFAC, Inst Fis Applicata Nello Carrara, I-50127 Florence, Italy
dc.description.affiliationInst Chem, UNESP, Araraquara, Brazil
dc.description.affiliationUnespInst Chem, UNESP, Araraquara, Brazil
dc.format.extent28-30
dc.identifierhttp://dx.doi.org/10.1063/1.1489477
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 81, n. 1, p. 28-30, 2002.
dc.identifier.doi10.1063/1.1489477
dc.identifier.fileWOS000176426000010.pdf
dc.identifier.issn0003-6951
dc.identifier.lattes6446047463034654
dc.identifier.lattes2998503841917815
dc.identifier.urihttp://hdl.handle.net/11449/36986
dc.identifier.wosWOS:000176426000010
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleSol-gel Er-doped SiO(2)-HfO(2) planar waveguides: A viable system for 1.5 mu m applicationen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
unesp.author.lattes6446047463034654
unesp.author.lattes2998503841917815
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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Artigos - Química Inorgânica - IQ