Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

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dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.authorSantos, M. A. [UNESP]
dc.contributor.authorRamirez, M. A. [UNESP]
dc.contributor.authorTararam, R. [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:18:36Z
dc.date.available2014-05-20T14:18:36Z
dc.date.issued2008-07-01
dc.description.abstractThe relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.en
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Quim Fis, BR-14800900 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Quim Fis, BR-14800900 Araraquara, SP, Brazil
dc.format.extent1694-1698
dc.identifierhttp://dx.doi.org/10.1002/pssa.200723355
dc.identifier.citationPhysica Status Solidi A-applications and Materials Science. Weinheim: Wiley-v C H Verlag Gmbh, v. 205, n. 7, p. 1694-1698, 2008.
dc.identifier.doi10.1002/pssa.200723355
dc.identifier.issn1862-6300
dc.identifier.lattes0477045906733254
dc.identifier.orcid0000-0003-2827-0208
dc.identifier.urihttp://hdl.handle.net/11449/25609
dc.identifier.wosWOS:000257828100031
dc.language.isoeng
dc.publisherWiley-v C H Verlag Gmbh
dc.relation.ispartofPhysica Status Solidi A: Applications and Materials Science
dc.relation.ispartofjcr1.795
dc.relation.ispartofsjr0,648
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleRelationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductoren
dc.typeArtigo
dcterms.licensehttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
dcterms.rightsHolderWiley-v C H Verlag Gmbh
unesp.author.lattes0477045906733254[1]
unesp.author.orcid0000-0003-2827-0208[1]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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Artigos - Físico Química - IQ