Influence of thermal annealing treatment in oxygen atmosphere on grain boundary chemistry and non-ohmic properties of SnO2 center dot MnO polycrystalline semiconductors

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dc.contributor.authorOrlandi, Marcelo Ornaghi [UNESP]
dc.contributor.authorBueno, Paulo Roberto [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:29:44Z
dc.date.available2014-05-20T13:29:44Z
dc.date.issued2008-02-01
dc.description.abstractThe present work studied the influence of thermal treatment in oxygen rich atmosphere on heterogenous junctions in Mn-doped SnO2 polycrystalline system presenting varistor behavior. The samples were prepared by conventional oxide mixture methodology, and were submitted to heat treatment in oxygen rich atmosphere at 900 degrees C for 2h. The samples were characterized by X-ray diffraction, scanning electron microscopy, dc and ac electrical measurements. The results showed that there is an evident relationship between the microstructure heterogeneity and non-ohmic electrical properties. It was found that for this SnO2 center dot MnO-based varistor system the heat treatment in oxygen rich atmosphere does not necessarily increase the varistors properties, which was related to the decrease in the grain boundary resistance. The results are compared with Co-doped SnO2 varistors and ZnO based varistors. (C) 2008 WILEY-VCH Verlay GmbH & Co. KGaA, Weinheim.en
dc.description.affiliationUniv Estadual Paulista, Dept Quim & Fis, BR-15385000 Ilha Solteira, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Quim Fis, BR-14800900 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Dept Quim & Fis, BR-15385000 Ilha Solteira, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Quim Fis, BR-14800900 Araraquara, SP, Brazil
dc.format.extent383-388
dc.identifierhttp://dx.doi.org/10.1002/pssa.200723340
dc.identifier.citationPhysica Status Solidi A-applications and Materials Science. Weinheim: Wiley-v C H Verlag Gmbh, v. 205, n. 2, p. 383-388, 2008.
dc.identifier.doi10.1002/pssa.200723340
dc.identifier.issn1862-6300
dc.identifier.lattes0477045906733254
dc.identifier.lattes2305581567093057
dc.identifier.orcid0000-0003-2827-0208
dc.identifier.urihttp://hdl.handle.net/11449/10057
dc.identifier.wosWOS:000253551000029
dc.language.isoeng
dc.publisherWiley-v C H Verlag Gmbh
dc.relation.ispartofPhysica Status Solidi A: Applications and Materials Science
dc.relation.ispartofjcr1.795
dc.relation.ispartofsjr0,648
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleInfluence of thermal annealing treatment in oxygen atmosphere on grain boundary chemistry and non-ohmic properties of SnO2 center dot MnO polycrystalline semiconductorsen
dc.typeArtigo
dcterms.licensehttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
dcterms.rightsHolderWiley-v C H Verlag Gmbh
unesp.author.lattes0477045906733254[2]
unesp.author.lattes2305581567093057
unesp.author.orcid0000-0003-2827-0208[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Ilha Solteirapt
unesp.departmentFísica e Química - FEISpt

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Ilha Solteira - FEIS - Faculdade de Engenharia
Artigos - Físico Química - IQ