Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films

dc.contributor.authorBerger, Danielle
dc.contributor.authorKubaski, Evaldo Toniolo
dc.contributor.authorSequinel, Thiago
dc.contributor.authorDa Silva, Renata Martins
dc.contributor.authorTebcherani, Sergio Mazurek
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:27:26Z
dc.date.available2014-05-27T11:27:26Z
dc.date.issued2012-12-21
dc.description.abstractZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330°C for 32h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575nm) and orange (645nm) photoluminescence. © 2012 John Wiley & Sons, Ltd.en
dc.identifierhttp://dx.doi.org/10.1002/bio.2463
dc.identifier.citationLuminescence.
dc.identifier.doi10.1002/bio.2463
dc.identifier.issn1522-7235
dc.identifier.issn1522-7243
dc.identifier.scopus2-s2.0-84871141030
dc.identifier.urihttp://hdl.handle.net/11449/74082
dc.identifier.wosWOS:000328577800023
dc.language.isoeng
dc.relation.ispartofLuminescence
dc.relation.ispartofjcr1.671
dc.relation.ispartofsjr0,396
dc.relation.ispartofsjr0,396
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectPhotoluminescence
dc.subjectPressure treatment
dc.subjectZnO thin film
dc.titleEffect of pressure-assisted thermal annealing on the optical properties of ZnO thin filmsen
dc.typeArtigo
dcterms.licensehttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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