Preparation of 9/65/35 PLZT thin films deposited by a dip-coating process

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorZaghete, M. A.
dc.contributor.authorCilense, M.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorStojanovic, B. D.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversity of Belgrade
dc.date.accessioned2014-05-20T15:30:07Z
dc.date.available2014-05-20T15:30:07Z
dc.date.issued2001-09-01
dc.description.abstractCrack-free polycrystalline PLZT (Pb,a)(Zr,Ti)O-3 thin films with the perovskite structure were prepared by dir-coating using the Pechinis process. Lead acetate, hydrated lanthanum carbonate, zirconium n-propoxide and titanium isopropoxide were used as raw materials. The viscosity of the solution was adjusted in the range of 20 to 56 cP and the films were deposited by a dip-coating process on silicon (100) as substrate. Solutions with ionic concentration of 0.1 and 0.2 M were used. Thin film deposition was accomplished by dipping the substrates in the solution with control of withdrawal speed from 5 to 20 mm/min. The thin films were thermally treated in two steps: at 300 degreesC amid 650 degreesC. The influence of withdrawal speed. viscosity, heating rate and ionic concentration on the morphology of PLZT thin film was discussed. (C) 2001 Elsevier B.V. Ltd. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, Inst Quim, BR-14800900 São Paulo, Brazil
dc.description.affiliationUniv Belgrade, Ctr Multidisciplinary Studies, Belgrade, Yugoslavia
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, BR-14800900 São Paulo, Brazil
dc.format.extent1151-1157
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(00)00341-1
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 21, n. 9, p. 1151-1157, 2001.
dc.identifier.doi10.1016/S0955-2219(00)00341-1
dc.identifier.issn0955-2219
dc.identifier.lattes9128353103083394
dc.identifier.urihttp://hdl.handle.net/11449/39558
dc.identifier.wosWOS:000169252600003
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdip-coatingpt
dc.subjectfilmspt
dc.subjectPLZTpt
dc.subjectprecursors-organicpt
dc.subjectsubstratespt
dc.subjectsurfacespt
dc.titlePreparation of 9/65/35 PLZT thin films deposited by a dip-coating processen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes9128353103083394
unesp.author.lattes3573363486614904[1]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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Artigos - Físico Química - IQ