Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

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dc.contributor.authorGonçalves, Rogéria R.
dc.contributor.authorCarturan, Giovanni
dc.contributor.authorZampedri, Luca
dc.contributor.authorFerrari, Maurizio
dc.contributor.authorArmellini, Cristina
dc.contributor.authorChiasera, Alessandro
dc.contributor.authorMattarelli, M.
dc.contributor.authorMoser, Enrico
dc.contributor.authorMontagna, Maurizio
dc.contributor.authorRighini, Giancarlo C.
dc.contributor.authorPelli, Stefano
dc.contributor.authorNunzi Conti, Gualtiero
dc.contributor.authorRibeiro, Sidney J.L. [UNESP]
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.authorMinotti, Antonio
dc.contributor.authorFoglietti, Vittorio
dc.contributor.authorPortales, Hervè
dc.contributor.institutionUniversità di Trento
dc.contributor.institutionIst. di Fotonica e Nanotecnologie
dc.contributor.institutionIst. di Fis. Applicata Nello Carrara
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionMEMS Group
dc.contributor.institutionUniversità di Padova
dc.date.accessioned2014-05-27T11:20:56Z
dc.date.available2014-05-27T11:20:56Z
dc.date.issued2003-11-27
dc.description.abstractErbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.en
dc.description.affiliationDipto. di Ingegneria dei Materiali Università di Trento, Via Mesiano 77, 1-38050 Trento
dc.description.affiliationCNR-IFN Ist. di Fotonica e Nanotecnologie, via Sommarive 14, 1-38050 Povo, Trento
dc.description.affiliationDipartimento di Fisica INFM Università di Trento, via Sommarive 14, 1-38050 Povo, Trento
dc.description.affiliationCNR-IFAC Ist. di Fis. Applicata Nello Carrara, via Panciatichi 64, 1-50127 Firenze
dc.description.affiliationInstitute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP
dc.description.affiliationCNR Ist. di Fotonica e Nanotecnologie MEMS Group, Via Cineto Romano 42, I-00156 Roma
dc.description.affiliationDipartimento di Fisica INFM Università di Padova, via Marzolo 8, 1-35131 Padova
dc.description.affiliationUnespInstitute of Chemistry UNESP, P.O.Box 355, 14801-970 Araraquara, SP
dc.format.extent111-120
dc.identifierhttp://dx.doi.org/10.1117/12.478340
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, v. 4990, p. 111-120.
dc.identifier.doi10.1117/12.478340
dc.identifier.issn0277-786X
dc.identifier.lattes2998503841917815
dc.identifier.scopus2-s2.0-0242693284
dc.identifier.urihttp://hdl.handle.net/11449/67477
dc.language.isoeng
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectChannel waveguides
dc.subjectErbium
dc.subjectLuminescence
dc.subjectSilica-hafnia
dc.subjectSol-gel planar waveguides
dc.subjectDeposition
dc.subjectEtching
dc.subjectMorphology
dc.subjectSemiconductor doping
dc.subjectSilicon wafers
dc.subjectSol-gels
dc.subjectSubstrates
dc.subjectWavelength division multiplexing
dc.subjectPlanar waveguides
dc.subjectOptical waveguides
dc.titleSol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguidesen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://proceedings.spiedigitallibrary.org/ss/TermsOfUse.aspx
unesp.author.lattes2998503841917815
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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