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Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorStojanovic, B. D.
dc.contributor.authorZaghete, M. A.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorRies, A.
dc.contributor.authorMoura, F.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversity of Belgrade
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:25:47Z
dc.date.available2014-05-20T15:25:47Z
dc.date.issued2004-01-01
dc.description.abstractLanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The scanning electron microscopy shows a change of morphology with increasing the lanthanum concentration. The BLT films show well-saturated polarization-electric field curves whit remnant polarizations of 14.7, 20.5, 21.5, and 20.4 muC/cm(2) for x = 0, 0.25, 0.50 and 0.75, respectively. The dielectric constant of BLT (x = 0.75 mol% La) is equal to 158 while dielectric loss remain low (tandelta = 0.0018).en
dc.description.affiliationUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Belgrade, Ctr Multidisciplinary Studies, YU-11001 Belgrade, Yugoslavia
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, UFSCAR, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent21-31
dc.identifierhttp://dx.doi.org/10.1080/10584580490440837
dc.identifier.citationIntegrated Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 60, p. 21-31, 2004.
dc.identifier.doi10.1080/10584580490440837
dc.identifier.issn1058-4587
dc.identifier.urihttp://hdl.handle.net/11449/36132
dc.identifier.wosWOS:000221024200002
dc.language.isoeng
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofIntegrated Ferroelectrics
dc.relation.ispartofjcr0.367
dc.relation.ispartofsjr0,182
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectBLTpt
dc.subjectthin filmspt
dc.subjectelectrical propertiespt
dc.titleElectrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
dcterms.rightsHolderTaylor & Francis Ltd
dspace.entity.typePublication
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[4]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química