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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

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dc.contributor.authorAraujo, Luana S.
dc.contributor.authorBerengue, Olivia [UNESP]
dc.contributor.authorBaldan, Maurício
dc.contributor.authorFerreira, Neidenei
dc.contributor.authorMoro, João
dc.contributor.authorChiquito, Adenilson
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionLaboratório Associado de Sensores e Materiais, LAS, INPE
dc.contributor.institutionInstitute Federal de Educação, Ciência e Tecnologia de São Paulo
dc.date.accessioned2022-04-28T19:01:26Z
dc.date.available2022-04-28T19:01:26Z
dc.date.issued2014-01-01
dc.description.abstractDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O<inf>2</inf> plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O<inf>2</inf> plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.en
dc.description.affiliationNanO LaB, Departamento de Física, Universidade Federal de São Carlos
dc.description.affiliationFaculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita Filho
dc.description.affiliationLaboratório Associado de Sensores e Materiais, LAS, INPE
dc.description.affiliationInstitute Federal de Educação, Ciência e Tecnologia de São Paulo
dc.description.affiliationUnespFaculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita Filho
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipIdCNPq: 2010/302640-0
dc.format.extent1-6
dc.identifierhttp://dx.doi.org/10.1557/opl.2014.701
dc.identifier.citationMaterials Research Society Symposium Proceedings, v. 1634, n. January, p. 1-6, 2014.
dc.identifier.doi10.1557/opl.2014.701
dc.identifier.issn0272-9172
dc.identifier.scopus2-s2.0-84938360068
dc.identifier.urihttp://hdl.handle.net/11449/220415
dc.language.isoeng
dc.relation.ispartofMaterials Research Society Symposium Proceedings
dc.sourceScopus
dc.titleElectrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profilingen
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia e Ciências, Guaratinguetápt

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Guaratinguetá - FEG - Faculdade de Engenharia e Ciências