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Preparation of Pb(Zr,Ti)O-3 thin films by soft chemical route

dc.contributor.authorPontes, F. M.
dc.contributor.authorLeite, E. R.
dc.contributor.authorNunes, MSJ
dc.contributor.authorPontes, DSL
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorMagnani, R.
dc.contributor.authorPizani, P. S.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:27:37Z
dc.date.available2014-05-20T15:27:37Z
dc.date.issued2004-09-01
dc.description.abstractLead zirconate titanate, Pb(Zr0.3Ti0.7)O-3 (PZT) thin films were prepared with success by the polymeric precursor method. Differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FT-IR), Micro-Raman spectroscopy and X-ray diffraction (XRD) were used to investigate the formation of the PZT perovskite phase. X-ray diffraction revealed that the film showed good crystallinity and no presence of secondary phases was identified. This indicates that the PZT thin films were crystallized in a single phase. PZT thin films showed a well-developed dense grain structure with uniform distribution, without the presence of rosette structure. The Raman spectra undoubtedly revealed these thin films in the tetragonal phase. For the thin films annealed at the 500-700 degreesC range, the vibration modes of the oxygen sublattice of the PZT perovskite phase were confirmed by FT-IR. The room temperature dielectric constant and dielectric loss of the PZT films, measured at 1 kHz were 646 and 0.090, respectively, for thin film with 365 nm thickness annealed at 700 degreesC for 2 h. A typical P-E hysteresis loop was observed and the measured values of P-s, P-r and E-c were 68 muC/cm(2), 44 muC/cm(2) and 123 kV/cm, respectively. The leakage current density was about 4.8 x 10(-7) A/cm(2) at 1.5 V. (C) 2003 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUFSCar, Dept Chem, LIEC, CMDMC, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUFSCar, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUNESP, Inst Chem, Ararquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Chem, Ararquara, SP, Brazil
dc.format.extent2969-2976
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(03)00318-2
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 24, n. 10-11, p. 2969-2976, 2004.
dc.identifier.doi10.1016/S0955-2219(03)00318-2
dc.identifier.issn0955-2219
dc.identifier.urihttp://hdl.handle.net/11449/37577
dc.identifier.wosWOS:000222117700008
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdielectric propertiespt
dc.subjectfilmspt
dc.subjectPb(Zr,Ti)O-3pt
dc.subjectPZTpt
dc.titlePreparation of Pb(Zr,Ti)O-3 thin films by soft chemical routeen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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