UTBB FD-SOI MOSFET with SELBOX in DTMOS configuration
Carregando...
Fontes externas
Fontes externas
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Journal of Integrated Circuits and Systems
Tipo
Artigo
Direito de acesso
Acesso aberto
Fontes externas
Fontes externas
Resumo
For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI) n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) sub-strate was analyzed. The drain and substrate current, transcon-ductance (gm) and Subthreshold Slope (SS) ware compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the out-put conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.
Descrição
Palavras-chave
Idioma
Inglês
Citação
Journal of Integrated Circuits and Systems, v. 17, n. 3, 2022.
