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Strain- and electric field-induced band gap modulation in nitride nanomembranes

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dc.contributor.authorAmorim, Rodrigo G.
dc.contributor.authorZhong, Xiaoliang
dc.contributor.authorMukhopadhyay, Saikat
dc.contributor.authorPandey, Ravindra
dc.contributor.authorRocha, Alexandre R. [UNESP]
dc.contributor.authorKarna, Shashi P.
dc.contributor.institutionMichigan Technological University
dc.contributor.institutionUniversidade Federal do ABC (UFABC)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionATTN: RDL-WM
dc.date.accessioned2014-05-27T11:29:30Z
dc.date.available2014-05-27T11:29:30Z
dc.date.issued2013-05-15
dc.description.abstractThe hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.en
dc.description.affiliationDepartment of Physics Michigan Technological University, Houghton, MI 49931
dc.description.affiliationCentro de Ciências Naturais e Humanas Universidade Federal Do ABC, Santo André, SP
dc.description.affiliationInstituto de Física Teórica Universidade Estadual Paulista (UNESP), São Paulo, SP
dc.description.affiliationUS Army Research Laboratory Weapons and Materials Research Directorate ATTN: RDL-WM, Aberdeen Proving Ground, MD 21005-5069
dc.description.affiliationUnespInstituto de Física Teórica Universidade Estadual Paulista (UNESP), São Paulo, SP
dc.identifierhttp://dx.doi.org/10.1088/0953-8984/25/19/195801
dc.identifier.citationJournal of Physics Condensed Matter, v. 25, n. 19, 2013.
dc.identifier.doi10.1088/0953-8984/25/19/195801
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.orcid0000-0001-8874-6947
dc.identifier.scopus2-s2.0-84876905182
dc.identifier.urihttp://hdl.handle.net/11449/75405
dc.identifier.wosWOS:000318070100022
dc.language.isoeng
dc.relation.ispartofJournal of Physics: Condensed Matter
dc.relation.ispartofjcr2.617
dc.relation.ispartofsjr0,875
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectBandgap modulation
dc.subjectBulk counterpart
dc.subjectElectronic mobility
dc.subjectField-induced
dc.subjectField-induced modulation
dc.subjectGroup III nitrides
dc.subjectSemiconductor-metal transition
dc.subjectTechnological applications
dc.subjectAluminum nitride
dc.subjectDensity functional theory
dc.subjectElectric fields
dc.subjectGallium nitride
dc.subjectModulation
dc.subjectNanostructures
dc.subjectEnergy gap
dc.titleStrain- and electric field-induced band gap modulation in nitride nanomembranesen
dc.typeArtigo
dcterms.licensehttp://iopscience.iop.org/page/copyright
dspace.entity.typePublication
unesp.author.lattes4785631459929035[5]
unesp.author.orcid0000-0001-8874-6947[5]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Física Teórica (IFT), São Paulopt

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São Paulo - IFT - Instituto de Física Teórica