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Magnetoelectric properties of la-modified BiFeO3 thin films on strontium ruthenate (SrRuO3) buffered layer

dc.contributor.authorDeus, Regina C. [UNESP]
dc.contributor.authorFoschini, César R. [UNESP]
dc.contributor.authorVarela, José A. [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorSimões, Alexandre Z. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T17:24:22Z
dc.date.available2018-12-11T17:24:22Z
dc.date.issued2014-01-15
dc.description.abstractThis paper focus on the magnetoelectric coupling (ME) at room temperature in lanthanum modified bismuth ferrite thin film (BLFO) deposited on SrRuO 3-buffered Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. BLFO film was coherently grown at a temperature of 500°C. The magnetoelectric coefficient measurement was performed to evidence magnetoelectric coupling behavior. Room temperature magnetic coercive field indicates that the film is magnetically soft. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cmOe. Dielectric permittivity and dielectric loss demonstrated only slight dispersion with frequency due the less two-dimensional stress in the plane of the film. The spontaneous polarization of the film was 25 μC/cm2. The film has a piezoelectric coefficient, d33, equal to 85 pm/V and a weak pulse width dependence indicating intrinsic ferroelectricity. Retention measurement showed no decay of polarization while piezoelectric response was greatly improved by the conductor electrode. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 71° and 180° domain switchings, and pinned domain formation occurred.en
dc.description.affiliationUniversidade Estadual Paulista UNESP Faculdade de Engenharia de Guaratinguetá, Av. Dr. A. P. da Cunha, 333, Bairro Portal das Colinas, 12516-410-Guaratinguetá-SP
dc.description.affiliationUniversidade Estadual Paulista UNESP Faculdade de Engenharia de Bauru, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360, Bauru, SP
dc.description.affiliationUniversidade Estadual Paulista UNESP Instituto de Química, Rua Professor Francisco Degni s/n, 14800-90, Araraquara, SP
dc.description.affiliationUnespUniversidade Estadual Paulista UNESP Faculdade de Engenharia de Guaratinguetá, Av. Dr. A. P. da Cunha, 333, Bairro Portal das Colinas, 12516-410-Guaratinguetá-SP
dc.description.affiliationUnespUniversidade Estadual Paulista UNESP Faculdade de Engenharia de Bauru, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360, Bauru, SP
dc.description.affiliationUnespUniversidade Estadual Paulista UNESP Instituto de Química, Rua Professor Francisco Degni s/n, 14800-90, Araraquara, SP
dc.format.extent9-21
dc.identifier.citationCeramic Engineering and Science Proceedings, v. 34, n. 8, p. 9-21, 2014.
dc.identifier.issn0196-6219
dc.identifier.lattes1922357184842767
dc.identifier.orcid0000-0003-1300-4978
dc.identifier.scopus2-s2.0-84891895424
dc.identifier.urihttp://hdl.handle.net/11449/177183
dc.language.isoeng
dc.relation.ispartofCeramic Engineering and Science Proceedings
dc.relation.ispartofsjr0,152
dc.rights.accessRightsAcesso abertopt
dc.sourceScopus
dc.titleMagnetoelectric properties of la-modified BiFeO3 thin films on strontium ruthenate (SrRuO3) buffered layeren
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.lattes1922357184842767[2]
unesp.author.orcid0000-0003-1300-4978[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentMateriais e Tecnologia - FEGpt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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