Publicação:
Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy

dc.contributor.authorJasinevicius, Renato G.
dc.contributor.authorDos Santos, Francisco J. [UNESP]
dc.contributor.authorPizani, Paulo S.
dc.contributor.authorDuduch, Jaime G.
dc.contributor.authorPorto, Arthur J.V.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-27T11:19:56Z
dc.date.available2014-05-27T11:19:56Z
dc.date.issued2000-08-01
dc.description.abstractSilicon crystal exhibits a ductile regime during machining prior to the onset of fracture when appropriate cutting conditions are applied. The present study shows that the ductile regime is a result of a phase transformation which is indirectly evidenced by the amorphous phase detected in the machined surface. Transmission electron microscopy (TEM) planar view studies were successfully performed on monocrystalline silicon (1 0 0) single point diamond turned. TEM electron diffraction patterns show that the machined surface presents diffuse rings along with traces of crystalline material. This is attributed to crystalline silicon immersed in an amorphous matrix. Furthermore, only diffuse rings in the diffraction patterns of the ductile chip are detected, indicating that it is totally amorphous. © 2000 Elsevier Science B.V. All rights reserved.en
dc.description.affiliationDepto. de Engenharia Mecânica Esc. de Engenharia de S. Carlos Universidade de Sao Paulo, CP359, CEP 13560-970 São Carlos, SP
dc.description.affiliationDepto. de Físico-Quim. Instituto de Química Universidade Estadual Paulista, Caixa Postal 355, CEP 14800-900 Araraquara, SP
dc.description.affiliationDepartamento de Física Univ. Federal de São Carlos, Caixa Postal 676, 13565-905 São Carlos, SP
dc.description.affiliationUnespDepto. de Físico-Quim. Instituto de Química Universidade Estadual Paulista, Caixa Postal 355, CEP 14800-900 Araraquara, SP
dc.format.extent174-178
dc.identifierhttp://dx.doi.org/10.1016/S0022-3093(00)00236-2
dc.identifier.citationJournal of Non-Crystalline Solids, v. 272, n. 2-3, p. 174-178, 2000.
dc.identifier.doi10.1016/S0022-3093(00)00236-2
dc.identifier.issn0022-3093
dc.identifier.scopus2-s2.0-0345852367
dc.identifier.urihttp://hdl.handle.net/11449/66210
dc.identifier.wosWOS:000089190900011
dc.language.isoeng
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.titleSurface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopyen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

Arquivos