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Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

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dc.contributor.authorShimamura, K.
dc.contributor.authorBaldochi, S. L.
dc.contributor.authorRanieri, I. M.
dc.contributor.authorSato, H.
dc.contributor.authorFujita, T.
dc.contributor.authorMazzocchi, V. L.
dc.contributor.authorParente, CBR
dc.contributor.authorPaiva-Santos, C. O.
dc.contributor.authorSantilli, Celso Valentim [UNESP]
dc.contributor.authorSarukura, N.
dc.contributor.authorFukuda, T.
dc.contributor.institutionTohoku Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionInst Mol Sci
dc.date.accessioned2014-05-20T15:22:16Z
dc.date.available2014-05-20T15:22:16Z
dc.date.issued2001-03-01
dc.description.abstractCe-doped and undoped LiCaAlF6 (LiCAF) single crystals 50 mm in diameter were grown by the Czochralski technique. The formation of inclusions and cracks accompanying the crystal growth was investigated. The dependence of lattice parameters on the temperature was measured for LiCAF and LiSrAlF6 single crystals. Linear thermal expansion coefficients for both these crystals were evaluated. Higher transmission properties for LiCAF single crystals were achieved in the UV and VUV wavelength regions. (C) 2001 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
dc.description.affiliationUNESP, Inst Quim, São Paulo, Brazil
dc.description.affiliationInst Mol Sci, Okazaki, Aichi 4448585, Japan
dc.description.affiliationUnespUNESP, Inst Quim, São Paulo, Brazil
dc.format.extent383-388
dc.identifierhttp://dx.doi.org/10.1016/S0022-0248(01)00593-0
dc.identifier.citationJournal of Crystal Growth. Amsterdam: Elsevier B.V., v. 223, n. 3, p. 383-388, 2001.
dc.identifier.doi10.1016/S0022-0248(01)00593-0
dc.identifier.issn0022-0248
dc.identifier.lattes5584298681870865
dc.identifier.orcid0000-0002-8356-8093
dc.identifier.urihttp://hdl.handle.net/11449/33281
dc.identifier.wosWOS:000167487400010
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Crystal Growth
dc.relation.ispartofjcr1.742
dc.relation.ispartofsjr0,592
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectgrowth from meltpt
dc.subjectCzochralski methodpt
dc.subjecthalidespt
dc.titleCrystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphereen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes5584298681870865[9]
unesp.author.orcid0000-0002-8356-8093[9]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química