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Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

dc.contributor.authorMendes, A. C.
dc.contributor.authorMaia, L. J. Q. [UNESP]
dc.contributor.authorMessaddeq, S. H. [UNESP]
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.authorRibeiro, Sidney José Lima [UNESP]
dc.contributor.authorLi, M. Siu
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Federal de Goiás (UFG)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:30Z
dc.date.available2014-05-20T15:30:30Z
dc.date.issued2011-12-01
dc.description.abstractOxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics. (C) 2011 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv São Paulo, Inst Fis São Carlos, BR-13566590 São Carlos, SP, Brazil
dc.description.affiliationUniversidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 05/58396-0
dc.format.extent4381-4386
dc.identifierhttp://dx.doi.org/10.1016/j.physb.2011.08.091
dc.identifier.citationPhysica B-condensed Matter. Amsterdam: Elsevier B.V., v. 406, n. 23, p. 4381-4386, 2011.
dc.identifier.doi10.1016/j.physb.2011.08.091
dc.identifier.issn0921-4526
dc.identifier.lattes2998503841917815
dc.identifier.lattes6446047463034654
dc.identifier.orcid0000-0003-3286-9440
dc.identifier.urihttp://hdl.handle.net/11449/39856
dc.identifier.wosWOS:000296872800009
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.ispartofjcr1.453
dc.relation.ispartofsjr0,417
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectOxysulfideen
dc.subjectOptical bandgapen
dc.subjectPhotoexpansionen
dc.subjectPhotobleachingen
dc.subjectThin filmsen
dc.titlePhotoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 systemen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes2998503841917815
unesp.author.lattes6446047463034654
unesp.author.orcid0000-0003-3286-9440[5]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentQuímica Inorgânica - IQARpt

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