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Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

dc.contributor.authorReis, F. T.
dc.contributor.authorSantos, L. F. [UNESP]
dc.contributor.authorBianchi, R. F.
dc.contributor.authorCunha, H. N.
dc.contributor.authorMencaraglia, D.
dc.contributor.authorFaria, R. M.
dc.contributor.institutionUniversidade Federal de Santa Catarina (UFSC)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de Ouro Preto (UFOP)
dc.contributor.institutionUniversidade Federal do Piauí (UFPI)
dc.contributor.institutionUniv Paris 06
dc.contributor.institutionUniv Paris 11
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-20T14:02:32Z
dc.date.available2014-05-20T14:02:32Z
dc.date.issued2009-09-01
dc.description.abstractIn this paper, a detailed study of the capacitance spectra obtained from Au/doped-polyaniline/Al structures in the frequency domain (0.05 Hz-10 MHz), and at different temperatures (150-340 K) is carried out. The capacitance spectra behavior in semiconductors can be appropriately described by using abrupt cut-off models, since they assume that the electronic gap states that can follow the ac modulation have response times varying rapidly with a certain abscissa, which is dependent on both temperature and frequency. Two models based on the abrupt cut-off concept, formerly developed to describe inorganic semiconductor devices, have been used to analyze the capacitance spectra of devices based on doped polyaniline (PANI), which is a well-known polymeric semiconductor with innumerous potential technological applications. The application of these models allowed the determination of significant parameters, such as Debye length (approximate to 20 nm), position of bulk Fermi level (approximate to 320 meV) and associated density of states (approximate to 2x10(18) eV(-1) cm(-3)), width of the space charge region (approximate to 70 nm), built-in potential (approximate to 780 meV), and the gap states' distribution.en
dc.description.affiliationUniversidade Federal de Santa Catarina (UFSC), Dept Fis, BR-88040900 Florianopolis, SC, Brazil
dc.description.affiliationUNESP, IBILCE, Dept Fis, BR-15054000 Sao Jose do Rio Preto, SP, Brazil
dc.description.affiliationUniv Fed Ouro Preto, Dept Fis, BR-35400000 Ouro Preto, MG, Brazil
dc.description.affiliationUniv Fed Piaui, Dept Fis, BR-64049550 Teresina, PI, Brazil
dc.description.affiliationUniv Paris 06, Lab Genie Elect Paris, CNRS, UMR 8507,Ecole Super Elect, F-91192 Gif Sur Yvette, France
dc.description.affiliationUniv Paris 11, F-91192 Gif Sur Yvette, France
dc.description.affiliationUniv São Paulo, Inst Fis São Carlos, BR-13560970 São Carlos, SP, Brazil
dc.description.affiliationUnespUNESP, IBILCE, Dept Fis, BR-15054000 Sao Jose do Rio Preto, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent909-914
dc.identifierhttp://dx.doi.org/10.1007/s00339-009-5152-z
dc.identifier.citationApplied Physics A-materials Science & Processing. New York: Springer, v. 96, n. 4, p. 909-914, 2009.
dc.identifier.doi10.1007/s00339-009-5152-z
dc.identifier.issn0947-8396
dc.identifier.lattes0101178832675166
dc.identifier.urihttp://hdl.handle.net/11449/22046
dc.identifier.wosWOS:000268293100016
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofApplied Physics A-materials Science & Processing
dc.relation.ispartofjcr1.604
dc.relation.ispartofsjr0,481
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleApplication of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devicesen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
dspace.entity.typePublication
unesp.author.lattes0101178832675166
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Biociências, Letras e Ciências Exatas, São José do Rio Pretopt
unesp.departmentFísica - IBILCEpt

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