Publicação: Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices
dc.contributor.author | Reis, F. T. | |
dc.contributor.author | Santos, L. F. [UNESP] | |
dc.contributor.author | Bianchi, R. F. | |
dc.contributor.author | Cunha, H. N. | |
dc.contributor.author | Mencaraglia, D. | |
dc.contributor.author | Faria, R. M. | |
dc.contributor.institution | Universidade Federal de Santa Catarina (UFSC) | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.contributor.institution | Universidade Federal de Ouro Preto (UFOP) | |
dc.contributor.institution | Universidade Federal do Piauí (UFPI) | |
dc.contributor.institution | Univ Paris 06 | |
dc.contributor.institution | Univ Paris 11 | |
dc.contributor.institution | Universidade de São Paulo (USP) | |
dc.date.accessioned | 2014-05-20T14:02:32Z | |
dc.date.available | 2014-05-20T14:02:32Z | |
dc.date.issued | 2009-09-01 | |
dc.description.abstract | In this paper, a detailed study of the capacitance spectra obtained from Au/doped-polyaniline/Al structures in the frequency domain (0.05 Hz-10 MHz), and at different temperatures (150-340 K) is carried out. The capacitance spectra behavior in semiconductors can be appropriately described by using abrupt cut-off models, since they assume that the electronic gap states that can follow the ac modulation have response times varying rapidly with a certain abscissa, which is dependent on both temperature and frequency. Two models based on the abrupt cut-off concept, formerly developed to describe inorganic semiconductor devices, have been used to analyze the capacitance spectra of devices based on doped polyaniline (PANI), which is a well-known polymeric semiconductor with innumerous potential technological applications. The application of these models allowed the determination of significant parameters, such as Debye length (approximate to 20 nm), position of bulk Fermi level (approximate to 320 meV) and associated density of states (approximate to 2x10(18) eV(-1) cm(-3)), width of the space charge region (approximate to 70 nm), built-in potential (approximate to 780 meV), and the gap states' distribution. | en |
dc.description.affiliation | Universidade Federal de Santa Catarina (UFSC), Dept Fis, BR-88040900 Florianopolis, SC, Brazil | |
dc.description.affiliation | UNESP, IBILCE, Dept Fis, BR-15054000 Sao Jose do Rio Preto, SP, Brazil | |
dc.description.affiliation | Univ Fed Ouro Preto, Dept Fis, BR-35400000 Ouro Preto, MG, Brazil | |
dc.description.affiliation | Univ Fed Piaui, Dept Fis, BR-64049550 Teresina, PI, Brazil | |
dc.description.affiliation | Univ Paris 06, Lab Genie Elect Paris, CNRS, UMR 8507,Ecole Super Elect, F-91192 Gif Sur Yvette, France | |
dc.description.affiliation | Univ Paris 11, F-91192 Gif Sur Yvette, France | |
dc.description.affiliation | Univ São Paulo, Inst Fis São Carlos, BR-13560970 São Carlos, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, IBILCE, Dept Fis, BR-15054000 Sao Jose do Rio Preto, SP, Brazil | |
dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.format.extent | 909-914 | |
dc.identifier | http://dx.doi.org/10.1007/s00339-009-5152-z | |
dc.identifier.citation | Applied Physics A-materials Science & Processing. New York: Springer, v. 96, n. 4, p. 909-914, 2009. | |
dc.identifier.doi | 10.1007/s00339-009-5152-z | |
dc.identifier.issn | 0947-8396 | |
dc.identifier.lattes | 0101178832675166 | |
dc.identifier.uri | http://hdl.handle.net/11449/22046 | |
dc.identifier.wos | WOS:000268293100016 | |
dc.language.iso | eng | |
dc.publisher | Springer | |
dc.relation.ispartof | Applied Physics A-materials Science & Processing | |
dc.relation.ispartofjcr | 1.604 | |
dc.relation.ispartofsjr | 0,481 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.title | Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices | en |
dc.type | Artigo | |
dcterms.license | http://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0 | |
dcterms.rightsHolder | Springer | |
dspace.entity.type | Publication | |
unesp.author.lattes | 0101178832675166 | |
unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Biociências, Letras e Ciências Exatas, São José do Rio Preto | pt |
unesp.department | Física - IBILCE | pt |
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