Publicação: Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
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Data
1999-12-01
Orientador
Coorientador
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Resumo
The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
Descrição
Palavras-chave
Front end receivers, Gilbert cell mixers, Low noise amplifiers, Pseudomorphic high electron mobility transistors, Amplifiers (electronic), Buffer circuits, Computer simulation, Electric network topology, High electron mobility transistors, Mixer circuits, Monolithic microwave integrated circuits, Semiconducting gallium arsenide, Signal receivers, Integrated circuit layout
Idioma
Inglês
Como citar
SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.
