Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
| dc.contributor.author | Martins, E. [UNESP] | |
| dc.contributor.author | Gomes, M. V G [UNESP] | |
| dc.contributor.author | Bastida, E. M. [UNESP] | |
| dc.contributor.author | Swart, J. W. [UNESP] | |
| dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
| dc.date.accessioned | 2014-05-27T11:19:49Z | |
| dc.date.available | 2014-05-27T11:19:49Z | |
| dc.date.issued | 1999-12-01 | |
| dc.description.abstract | The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz. | en |
| dc.description.affiliation | FEG/UNESP | |
| dc.description.affiliationUnesp | FEG/UNESP | |
| dc.format.extent | 267-270 | |
| dc.identifier | http://dx.doi.org/10.1109/IMOC.1999.867106 | |
| dc.identifier.citation | SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270. | |
| dc.identifier.doi | 10.1109/IMOC.1999.867106 | |
| dc.identifier.scopus | 2-s2.0-0033295721 | |
| dc.identifier.uri | http://hdl.handle.net/11449/65955 | |
| dc.language.iso | eng | |
| dc.relation.ispartof | SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings | |
| dc.rights.accessRights | Acesso aberto | pt |
| dc.source | Scopus | |
| dc.subject | Front end receivers | |
| dc.subject | Gilbert cell mixers | |
| dc.subject | Low noise amplifiers | |
| dc.subject | Pseudomorphic high electron mobility transistors | |
| dc.subject | Amplifiers (electronic) | |
| dc.subject | Buffer circuits | |
| dc.subject | Computer simulation | |
| dc.subject | Electric network topology | |
| dc.subject | High electron mobility transistors | |
| dc.subject | Mixer circuits | |
| dc.subject | Monolithic microwave integrated circuits | |
| dc.subject | Semiconducting gallium arsenide | |
| dc.subject | Signal receivers | |
| dc.subject | Integrated circuit layout | |
| dc.title | Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology | en |
| dc.type | Trabalho apresentado em evento | pt |
| dcterms.license | http://www.ieee.org/publications_standards/publications/rights/rights_policies.html | |
| dspace.entity.type | Publication | |
| relation.isOrgUnitOfPublication | a4071986-4355-47c3-a5a3-bd4d1a966e4f | |
| relation.isOrgUnitOfPublication.latestForDiscovery | a4071986-4355-47c3-a5a3-bd4d1a966e4f | |
| unesp.campus | Universidade Estadual Paulista (UNESP), Faculdade de Engenharia e Ciências, Guaratinguetá | pt |
