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Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films

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dc.contributor.authorPontes, F. M. [UNESP]
dc.contributor.authorPontes, D. S.L. [UNESP]
dc.contributor.authorChiquito, A. J.
dc.contributor.authorColmenares, Y. N.
dc.contributor.authorMastelaro, V. R.
dc.contributor.authorLongo, E. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2019-10-06T16:56:47Z
dc.date.available2019-10-06T16:56:47Z
dc.date.issued2018-10-01
dc.description.abstractThis work investigates the impact of Fe 3+ and La 3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe 3+ and La 3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.en
dc.description.affiliationDepartment of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473
dc.description.affiliationNanO LaB – Department of Physics Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676
dc.description.affiliationPhysics Institute of São Carlos (IFSC) Universidade de São Paulo
dc.description.affiliationLIEC – CDMF – Department of Chemistry Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676
dc.description.affiliationUnespDepartment of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent179-188
dc.identifierhttp://dx.doi.org/10.1016/j.mseb.2018.11.013
dc.identifier.citationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, v. 236-237, p. 179-188.
dc.identifier.doi10.1016/j.mseb.2018.11.013
dc.identifier.issn0921-5107
dc.identifier.scopus2-s2.0-85057418221
dc.identifier.urihttp://hdl.handle.net/11449/189928
dc.language.isoeng
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectDielectric relaxation
dc.subjectElectrical transport
dc.subjectImpedance spectroscopy
dc.subjectThin films
dc.titleElectrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin filmsen
dc.typeArtigo
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQpt

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