Publicação: A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
| dc.contributor.author | Silva, Vanessa C. P. | |
| dc.contributor.author | Wirth, Gilson | |
| dc.contributor.author | Martino, Joao A. | |
| dc.contributor.author | Agopian, Paula G. D. [UNESP] | |
| dc.contributor.author | IEEE | |
| dc.contributor.institution | Universidade de São Paulo (USP) | |
| dc.contributor.institution | Rio Grande do Sul Fed Univ | |
| dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
| dc.date.accessioned | 2020-12-10T17:32:46Z | |
| dc.date.available | 2020-12-10T17:32:46Z | |
| dc.date.issued | 2019-01-01 | |
| dc.description.abstract | The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Delta V-T approximate to 200-300mV - for W-NW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths. | en |
| dc.description.affiliation | Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil | |
| dc.description.affiliation | Rio Grande do Sul Fed Univ, UFRGS, Porto Alegre, RS, Brazil | |
| dc.description.affiliation | Sao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil | |
| dc.description.affiliationUnesp | Sao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil | |
| dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description.sponsorship | CEA-LETI | |
| dc.format.extent | 4 | |
| dc.identifier.citation | 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019. | |
| dc.identifier.uri | http://hdl.handle.net/11449/195386 | |
| dc.identifier.wos | WOS:000534490900007 | |
| dc.language.iso | eng | |
| dc.publisher | Ieee | |
| dc.relation.ispartof | 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019) | |
| dc.source | Web of Science | |
| dc.subject | NBTI | |
| dc.subject | NW | |
| dc.subject | SOI | |
| dc.subject | MOSFET | |
| dc.title | A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs | en |
| dc.type | Trabalho apresentado em evento | pt |
| dcterms.license | http://www.ieee.org/publications_standards/publications/rights/rights_policies.html | |
| dcterms.rightsHolder | Ieee | |
| dspace.entity.type | Publication | |
| unesp.author.orcid | 0000-0002-4990-5113[2] | |
| unesp.campus | Universidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vista | pt |