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The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

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dc.contributor.authorTeixeira, Fernando F.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorBarraud, Sylvain
dc.contributor.authorVinet, Maud
dc.contributor.authorFaynot, Olivier
dc.contributor.authorMartino, Joao A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionMinatec Campus and University Grenoble Alpes
dc.date.accessioned2018-12-11T16:51:16Z
dc.date.available2018-12-11T16:51:16Z
dc.date.issued2017-11-15
dc.description.abstractThe goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP) Campus of Sao Joao da Boa Vista
dc.description.affiliationCEA LETI Minatec Campus and University Grenoble Alpes
dc.description.affiliationUnespSao Paulo State University (UNESP) Campus of Sao Joao da Boa Vista
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2017.8113022
dc.identifier.citationSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.
dc.identifier.doi10.1109/SBMicro.2017.8113022
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85040568694
dc.identifier.urihttp://hdl.handle.net/11449/170551
dc.language.isoeng
dc.relation.ispartofSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rights.accessRightsAcesso abertopt
dc.sourceScopus
dc.subjectback leakage current
dc.subjectNanowire
dc.subjectoxide charger
dc.subjectproton irradiation
dc.titleThe influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistorsen
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vistapt

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São João da Boa Vista - FESJBV - Faculdade de Engenharia, São João da Boa Vista