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Influence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRamirez, M. A.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorRies, A.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:30:11Z
dc.date.available2014-05-20T15:30:11Z
dc.date.issued2005-08-15
dc.description.abstractThe (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. Atomic force microscopy and scanning electron microscopy showed relatively large grains, which is typical for this system. The capacitance dependence on voltage is strongly non-linear, confirming the ferroelectric properties of the films resulting from the domain switching. The (1 1 7)-oriented films exhibited a higher remanent polarization (23.7 μ C cm(-2)) than the (0 0 1 0)-oriented films (11.8 μ C cm(-2)). Fatigue tests revealed that the temperature of thermal treatment and degree of orientation affect the performance of the device. © 2005 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent373-378
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2005.01.043
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 92, n. 2-3, p. 373-378, 2005.
dc.identifier.doi10.1016/j.matchemphys.2005.01.043
dc.identifier.issn0254-0584
dc.identifier.urihttp://hdl.handle.net/11449/39627
dc.identifier.wosWOS:000229103900013
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.ispartofjcr2.210
dc.relation.ispartofsjr0,615
dc.rights.accessRightsAcesso restritopt
dc.sourceWeb of Science
dc.subjectbismuth titanatept
dc.subjectthin filmpt
dc.subjectdielectric propertiespt
dc.subjectferroelectric propertiespt
dc.titleInfluence of temperature on the dielectric and ferroelectric properties of bismuth titanate thin films obtained by the polymeric precursor methoden
dc.typeArtigopt
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[3]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[3]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química