Publicação: Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
| dc.contributor.author | Mori, C. A. B. | |
| dc.contributor.author | Agopian, P. G. D. [UNESP] | |
| dc.contributor.author | Martino, J. A. | |
| dc.contributor.author | IEEE | |
| dc.contributor.institution | Universidade de São Paulo (USP) | |
| dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
| dc.date.accessioned | 2020-12-10T17:58:55Z | |
| dc.date.available | 2020-12-10T17:58:55Z | |
| dc.date.issued | 2019-01-01 | |
| dc.description.abstract | In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect. | en |
| dc.description.affiliation | Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil | |
| dc.description.affiliation | Sao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil | |
| dc.description.affiliationUnesp | Sao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil | |
| dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description.sponsorshipId | FAPESP: 2017/26489-7 | |
| dc.format.extent | 3 | |
| dc.identifier.citation | 2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019. | |
| dc.identifier.issn | 2330-5738 | |
| dc.identifier.uri | http://hdl.handle.net/11449/195645 | |
| dc.identifier.wos | WOS:000565067300054 | |
| dc.language.iso | eng | |
| dc.publisher | Ieee | |
| dc.relation.ispartof | 2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis) | |
| dc.source | Web of Science | |
| dc.subject | Tunnel Field Effect Transistor (TFET) | |
| dc.subject | Silicon-On-Insulator (SOI) | |
| dc.subject | Ultra-Thin Body and Buried oxide (UTBB) | |
| dc.title | Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor | en |
| dc.type | Trabalho apresentado em evento | pt |
| dcterms.license | http://www.ieee.org/publications_standards/publications/rights/rights_policies.html | |
| dcterms.rightsHolder | Ieee | |
| dspace.entity.type | Publication | |
| unesp.campus | Universidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vista | pt |