Publicação:
Stacking faults in SiCf/SiC composite obtained by chemical vapor reaction process

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dc.contributor.authorFlorian, Marcio
dc.contributor.authorMarques, Rodrigo Fernando Costa [UNESP]
dc.contributor.authorCarvalho, Luiz Eduardo
dc.contributor.authorCairo, Carlos Alberto Alves
dc.contributor.authorBarelli, Nilso [UNESP]
dc.contributor.institutionITA- Divisão de Eng. Aeronáutica e Mecânica
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionIAE/CTA - Divisao de Materials
dc.date.accessioned2014-05-27T11:23:45Z
dc.date.available2014-05-27T11:23:45Z
dc.date.issued2008-12-01
dc.description.abstractSiC fiber-reinforced SiC matrix composite (SiCf/SiC) is one of the leading candidates in ceramic materials for engineering applications due to its unique combination of properties such as high thermal conductivity, high resistance to corrosion and working conditions. Fiber-reinforced composites are materials which exhibit a significant improvement in properties like ductility in comparison to the monolithic SiC ceramic. The SiCf/SiC composite was obtained from a C/C composite precursor using convertion reaction under high temperature and controlled atmosphere. In this work, SiC phase presented the stacking faults in the structure, being not possible to calculate the unit cell size, symmetry and bond lengths but it seem equal card number 29-1129 of JCPDS.en
dc.description.affiliationITA- Divisão de Eng. Aeronáutica e Mecânica, Pça Mai. Eduardo Gomes, 50, 12228-901 - São José dos Campos/SP
dc.description.affiliationUNESP - Institute de Química Dep; Físico-Quimica, R. Prof. Franciso Degni S/N - 14, Araraquara/SP
dc.description.affiliationIAE/CTA - Divisao de Materials, Pea Mal. Eduardo Gomes, 50, 12228-904 - São José dos Campos/SP
dc.description.affiliationUnespUNESP - Institute de Química Dep; Físico-Quimica, R. Prof. Franciso Degni S/N - 14, Araraquara/SP
dc.format.extent583-587
dc.identifierhttp://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.583
dc.identifier.citationMaterials Science Forum, v. 591-593, p. 583-587.
dc.identifier.doi10.4028/www.scientific.net/MSF.591-593.583
dc.identifier.issn0255-5476
dc.identifier.lattes2115942621694174
dc.identifier.orcid0000-0003-0195-3885
dc.identifier.scopus2-s2.0-58149129023
dc.identifier.urihttp://hdl.handle.net/11449/70737
dc.language.isoeng
dc.relation.ispartofMaterials Science Forum
dc.relation.ispartofsjr0,180
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectConvertion reactions
dc.subjectSiCf/SiC composite
dc.subjectStacking faults
dc.subjectX ray analysys
dc.subjectC/c composites
dc.subjectChemical vapor reaction processes
dc.subjectControlled atmospheres
dc.subjectEngineering applications
dc.subjectFiber-reinforced composites
dc.subjectHigh resistances
dc.subjectHigh temperatures
dc.subjectReaction under
dc.subjectSic ceramics
dc.subjectSiC fibers
dc.subjectSic matrix composites
dc.subjectUnit cell sizes
dc.subjectWorking conditions
dc.subjectCarbon fiber reinforced plastics
dc.subjectCeramic materials
dc.subjectChemical properties
dc.subjectCorrosion resistance
dc.subjectFiber reinforced materials
dc.subjectMaterials properties
dc.subjectMetallic matrix composites
dc.subjectPowders
dc.subjectSilicon carbide
dc.subjectCarbon Fibers
dc.subjectCeramics
dc.subjectChemical Properties
dc.subjectChemical Reactions
dc.subjectComposites
dc.subjectConversion
dc.subjectMaterials Handling
dc.subjectPowder
dc.subjectReinforced Plastic
dc.subjectReinforcement
dc.subjectSilicon Carbide
dc.subjectStacking
dc.subjectThermal Conductivity
dc.subjectX Ray Analysis
dc.titleStacking faults in SiCf/SiC composite obtained by chemical vapor reaction processen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.scientific.net/
dspace.entity.typePublication
unesp.author.lattes2115942621694174[2]
unesp.author.orcid0000-0003-0195-3885[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química