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Publicação:
Imprint behavior and polarization relaxation of PLZT thin films

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dc.contributor.authorAraujo, E. B. [UNESP]
dc.contributor.authorMelo, M. [UNESP]
dc.contributor.authorIvanov, M.
dc.contributor.authorShur, V. Ya.
dc.contributor.authorKholkin, A. L.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Aveiro
dc.contributor.institutionUral Fed Univ
dc.date.accessioned2019-10-04T12:35:55Z
dc.date.available2019-10-04T12:35:55Z
dc.date.issued2018-01-01
dc.description.abstractThickness dependence of imprint and polarization dynamics of Pb1-xLax(Zr1-yTiy)(1-x/4)O-3 (PLZT) thin films is reported in this work. Asymmetries in the histograms of the local piezoresponse reveal an imprint effect in the studied films whose origin could be associated to Schottky barriers near the film-substrate interface. Time-resolved spectroscopic measurements shows that the local polarization relaxation follows the exponential dependence . A maximum relaxation time approximate to 2.18s was observed for the 350nm thick film. A similar thickness dependence between grain size, correlation length () and relaxation time () suggest an intrinsic relationship between them.en
dc.description.affiliationSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, SP, Brazil
dc.description.affiliationUniv Aveiro, Dept Mat & Ceram Engn, Aveiro, Portugal
dc.description.affiliationUniv Aveiro, CICECO, Aveiro, Portugal
dc.description.affiliationUral Fed Univ, Inst Nat Sci, Ekaterinburg, Russia
dc.description.affiliationUnespSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, SP, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipGovernment of the Russian Federation
dc.description.sponsorshipProject CICECO-Aveiro Institute of Materials - national funds through the FCT/MEC
dc.description.sponsorshipFEDER under the PT2020 Partnership Agreement
dc.description.sponsorshipIdCNPq: 304604/2015-1
dc.description.sponsorshipIdCNPq: 400677/2014-8
dc.description.sponsorshipIdGovernment of the Russian Federation: 16-02-00821-a
dc.description.sponsorshipIdGovernment of the Russian Federation: 02. A03.21.0006
dc.description.sponsorshipIdProject CICECO-Aveiro Institute of Materials - national funds through the FCT/MEC: FCT UID/CTM/50011/2013
dc.description.sponsorshipIdCNPq: 232241/2014-7
dc.format.extent10-18
dc.identifierhttp://dx.doi.org/10.1080/00150193.2018.1470821
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 533, n. 1, p. 10-18, 2018.
dc.identifier.doi10.1080/00150193.2018.1470821
dc.identifier.issn0015-0193
dc.identifier.urihttp://hdl.handle.net/11449/185482
dc.identifier.wosWOS:000459872300003
dc.language.isoeng
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofFerroelectrics
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectPLZT
dc.subjectpolarization relaxation
dc.subjectthin films
dc.titleImprint behavior and polarization relaxation of PLZT thin filmsen
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
dcterms.rightsHolderTaylor & Francis Ltd
dspace.entity.typePublication
unesp.departmentFísica e Química - FEISpt

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Ilha Solteira - FEIS - Faculdade de Engenharia