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Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorGonzalez, AHM
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorSouza, E. C.
dc.contributor.authorMoura, F.
dc.contributor.authorZaghete, M. A.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:24:23Z
dc.date.available2014-05-20T15:24:23Z
dc.date.issued2004-07-01
dc.description.abstractLanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2P(r) = 41.4 muC/cm(2) and V-c = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.en
dc.description.affiliationUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, UFSCar, Dept Chem, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent65-70
dc.identifierhttp://dx.doi.org/10.1007/s10832-004-5077-z
dc.identifier.citationJournal of Electroceramics. Dordrecht: Kluwer Academic Publ, v. 13, n. 1-3, p. 65-70, 2004.
dc.identifier.doi10.1007/s10832-004-5077-z
dc.identifier.issn1385-3449
dc.identifier.lattes3892896473273324
dc.identifier.orcid0000-0001-7083-5626
dc.identifier.urihttp://hdl.handle.net/11449/34998
dc.identifier.wosWOS:000226236100010
dc.language.isoeng
dc.publisherKluwer Academic Publ
dc.relation.ispartofJournal of Electroceramics
dc.relation.ispartofjcr1.238
dc.relation.ispartofsjr0,427
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectbismuth lanthanum titanatept
dc.subjectFERAMpt
dc.subjectthin filmpt
dc.titleFerroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights
dcterms.rightsHolderKluwer Academic Publ
dspace.entity.typePublication
unesp.author.lattes3892896473273324[4]
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[3]
unesp.author.orcid0000-0001-7083-5626[4]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[3]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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