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Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

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dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorAguiar, E. C. [UNESP]
dc.contributor.authorGonzalez, A. H. M. [UNESP]
dc.contributor.authorAndres, J.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Jaume 1
dc.date.accessioned2014-05-20T15:34:02Z
dc.date.available2014-05-20T15:34:02Z
dc.date.issued2008-11-15
dc.description.abstractPure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.en
dc.description.affiliationUniv Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, Brazil
dc.description.affiliationUniv Jaume 1, Dept Quim Fis & Analit, Castellon de La Plana 12071, Spain
dc.description.affiliationUnespUniv Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, Brazil
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent6
dc.identifierhttp://dx.doi.org/10.1063/1.3029658
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.
dc.identifier.doi10.1063/1.3029658
dc.identifier.fileWOS000262605800118.pdf
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11449/42399
dc.identifier.wosWOS:000262605800118
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectannealingen
dc.subjectantiferromagnetic materialsen
dc.subjectatomic force microscopyen
dc.subjectbismuth compoundsen
dc.subjectdielectric polarisationen
dc.subjectferroelectric switchingen
dc.subjectferroelectric thin filmsen
dc.subjectlanthanum compoundsen
dc.subjectleakage currentsen
dc.subjectmultiferroicsen
dc.subjectpiezoelectricityen
dc.subjectplatinumen
dc.subjectRaman spectraen
dc.subjectscanning electron microscopyen
dc.subjectsiliconen
dc.subjectsilicon compoundsen
dc.subjecttitaniumen
dc.subjectX-ray diffractionen
dc.titleStrain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical methoden
dc.typeArtigo
dcterms.licensehttp://www.aip.org/pubservs/web_posting_guidelines.html
dcterms.rightsHolderAmer Inst Physics
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química